FT150R12KE3G_B4 - Infineon Technologies

Manufacturer Part Number

FT150R12KE3G_B4

Manufacturer

Infineon Technologies

Introduction

This product is a discrete semiconductor device, specifically an Insulated Gate Bipolar Transistor (IGBT) module, designed for three-phase inverter applications.

Product Features and Performance

Three-phase inverter configuration

Operating temperature up to 150°C (TJ)

Power rating of 700 W

Input capacitance (Cies) of 10.5 nF at 25 V

Collector-emitter breakdown voltage of 1200 V

Integrated NTC thermistor

Collector current (Ic) rating of 200 A

Collector-emitter saturation voltage (Vce(on)) of 2.15 V at 15 V, 150 A

Collector cutoff current (Ic) of 5 mA

Product Advantages

Robust design for high-power applications

Efficient thermal management with integrated NTC thermistor

Reliable performance at high operating temperatures

Suitable for various three-phase inverter applications

Key Technical Parameters

Voltage: 1200 V

Current: 200 A

Power: 700 W

Input capacitance: 10.5 nF

Collector-emitter saturation voltage: 2.15 V

Operating temperature: 150°C (TJ)

Quality and Safety Features

Designed and manufactured to high quality standards

Integrated protection features for safe operation

Compatibility

Suitable for use in three-phase inverter systems

Application Areas

Industrial motor drives

Renewable energy systems (e.g., solar inverters, wind turbine inverters)

Uninterruptible power supplies (UPS)

Electric vehicle (EV) and hybrid electric vehicle (HEV) propulsion systems

Product Lifecycle

This product is an active and widely used IGBT module

Replacement or upgraded products may be available in the future

Several Key Reasons to Choose This Product

Robust and reliable design for high-power applications

Efficient thermal management with integrated NTC thermistor

Capable of operating at high temperatures up to 150°C (TJ)

Suitable for a wide range of three-phase inverter applications

Manufactured to high quality and safety standards