Manufacturer Part Number
FP25R12KT4_B15
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor device, specifically a transistor in the IGBT (Insulated Gate Bipolar Transistor) module category.
Product Features and Performance
Trench Field Stop IGBT technology
Three-phase bridge rectifier input
Three-phase inverter configuration
Input capacitance (Cies) of 1.45 nF at 25 V
Collector-emitter breakdown voltage (Vces) of 1200 V
NTC thermistor for temperature monitoring
Maximum collector current (Ic) of 28 A
Maximum collector-emitter saturation voltage (Vce(on)) of 2.25 V at 15 V gate voltage and 25 A collector current
Product Advantages
High power density
Efficient heat dissipation
Reliable performance
Key Technical Parameters
Operating temperature range: -40°C to 150°C (TJ)
Maximum power dissipation: 160 W
Collector-emitter cutoff current (Ic(off)): 1 mA maximum
Quality and Safety Features
Chassis mount design for secure installation
Compliance with relevant industry standards
Compatibility
This IGBT module is designed for use in three-phase inverter applications.
Application Areas
Motor drives
Power converters
Industrial automation equipment
Product Lifecycle
The FP25R12KT4_B15 is an active product in Infineon's current portfolio. Replacements or upgrades may be available in the future.
Key Reasons to Choose This Product
Proven Trench Field Stop IGBT technology for high performance
Compact and efficient three-phase module design
Reliable thermal management for demanding applications
Competitive pricing and readily available supply
