FM28V202A-TG - Infineon Technologies

Manufacturer Part Number

FM28V202A-TG

Manufacturer

Infineon Technologies

Introduction

F-RAM non-volatile memory device with a 2Mbit capacity and parallel interface, designed for high-performance data storage and retention.

Product Features and Performance

2Mbit memory size

128K x 16 memory organization

FRAM technology for fast read and write

90ns write cycle time

90ns access time

Parallel memory interface

Operating temperature range from -40°C to 85°C

Surface mount 44-TSOP II package

Product Advantages

Instant non-volatile data storage

No delay in write cycles

High endurance and reliability

Low power consumption

Fast access time

Key Technical Parameters

Memory Size: 2Mbit

Write Cycle Time: 90ns

Access Time: 90ns

Voltage Supply Range: 2V ~ 3.6V

Operating Temperature: -40°C ~ 85°C

Quality and Safety Features

Robust storage over a wide temperature range

Durable construction suitable for industrial applications

Compatibility

Compatible with systems requiring 2V ~ 3.6V supply voltage

Parallel interface for easy integration with a wide range of microcontrollers and processors

Application Areas

Industrial control systems

Automotive electronics

Data logging and instrumentation

Medical devices

Networking and telecommunication equipment

Product Lifecycle

Product status is Active

Not indicated as nearing discontinuation

Availability of replacements or upgrades not specified

Several Key Reasons to Choose This Product

Non-volatile storage preserves data without power

FRAM provides faster write operations compared to traditional non-volatile memories like EEPROM

Greater endurance for write-intensive applications

Low power consumption enhances device longevity and reliability

Suitable for a variety of demanding applications due to its wide operating temperature range