Manufacturer Part Number
FM28V202A-TG
Manufacturer
Infineon Technologies
Introduction
F-RAM non-volatile memory device with a 2Mbit capacity and parallel interface, designed for high-performance data storage and retention.
Product Features and Performance
2Mbit memory size
128K x 16 memory organization
FRAM technology for fast read and write
90ns write cycle time
90ns access time
Parallel memory interface
Operating temperature range from -40°C to 85°C
Surface mount 44-TSOP II package
Product Advantages
Instant non-volatile data storage
No delay in write cycles
High endurance and reliability
Low power consumption
Fast access time
Key Technical Parameters
Memory Size: 2Mbit
Write Cycle Time: 90ns
Access Time: 90ns
Voltage Supply Range: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Robust storage over a wide temperature range
Durable construction suitable for industrial applications
Compatibility
Compatible with systems requiring 2V ~ 3.6V supply voltage
Parallel interface for easy integration with a wide range of microcontrollers and processors
Application Areas
Industrial control systems
Automotive electronics
Data logging and instrumentation
Medical devices
Networking and telecommunication equipment
Product Lifecycle
Product status is Active
Not indicated as nearing discontinuation
Availability of replacements or upgrades not specified
Several Key Reasons to Choose This Product
Non-volatile storage preserves data without power
FRAM provides faster write operations compared to traditional non-volatile memories like EEPROM
Greater endurance for write-intensive applications
Low power consumption enhances device longevity and reliability
Suitable for a variety of demanding applications due to its wide operating temperature range