Manufacturer Part Number
FM22L16-55-TG
Manufacturer
Infineon Technologies
Introduction
Integrated Circuit (IC) for memory applications
Part of the F-RAM (Ferroelectric RAM) series
Product Features and Performance
4Mbit (256K x 16) non-volatile FRAM memory
Fast access time of 110ns
Parallel memory interface
Wide operating voltage range of 2.7V to 3.6V
Wide operating temperature range of -40°C to 85°C
Product Advantages
Non-volatile memory with fast write speeds
Endurance of over 10 trillion (1E+13) write cycles
Low power consumption
Radiation-tolerant design
Key Technical Parameters
Memory Type: FRAM (Ferroelectric RAM)
Memory Size: 4Mbit (256K x 16)
Access Time: 110ns
Operating Voltage: 2.7V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant
44-TSOP II package
Compatibility
Surface mount design
Suitable for a variety of electronic applications
Application Areas
Embedded systems
Industrial control
Portable devices
Automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available from Infineon
Key Reasons to Choose This Product
High endurance and fast write speeds of FRAM technology
Wide operating voltage and temperature ranges
Low power consumption
Radiation-tolerant design for reliable operation
Compact surface mount package
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