FD401R17KF6C_B2 - Infineon Technologies

Manufacturer Part Number

FD401R17KF6C_B2

Manufacturer

Infineon Technologies

Introduction

This product is a discrete semiconductor device, specifically an Insulated-Gate Bipolar Transistor (IGBT) module, part of Infineon's TRENCHSTOP series.

Product Features and Performance

Rated for 3150 W of power

Single chopper configuration

Input capacitance of 27 nF at 25 V

Collector-emitter breakdown voltage of 1700 V

Maximum collector current of 650 A

On-state voltage of 3.1 V at 15 V gate voltage and 400 A collector current

Maximum collector cutoff current of 5 mA

Operating temperature range of -40°C to 125°C

Product Advantages

Robust and reliable IGBT design

High power density and efficiency

Suitable for a wide range of industrial applications

Key Technical Parameters

Manufacturer Part Number: FD401R17KF6C_B2

Package: Module

RoHS Compliance: RoHS3 Compliant

Mounting Type: Chassis Mount

Quality and Safety Features

RoHS3 compliant, ensuring compliance with environmental regulations

Designed and manufactured to high quality standards

Compatibility

This IGBT module is compatible with a wide range of industrial applications that require high-power switching and control.

Application Areas

Industrial motor drives

Power inverters

Welding equipment

Induction heating

Other high-power switching applications

Product Lifecycle

This IGBT module is an active product in Infineon's portfolio. Replacements or upgrades may become available in the future as technology evolves.

Key Reasons to Choose This Product

Robust and reliable IGBT design

High power density and efficiency

Suitable for a wide range of industrial applications

RoHS3 compliance for environmental safety

Manufactured to high quality standards