Manufacturer Part Number
F3L300R12MT4_B22
Manufacturer
Infineon Technologies
Introduction
This is a high-power discrete semiconductor product from Infineon Technologies, specifically a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module.
Product Features and Performance
Trench Field Stop IGBT technology for improved efficiency and lower conduction losses
Rated for up to 1550W of power
Operating temperature range of -40°C to 150°C
Input capacitance of 19nF at 25V
Collector-emitter breakdown voltage of 1200V
Collector current rating of up to 450A
On-state voltage (Vce(on)) of 2.1V at 15V gate voltage and 300A collector current
Product Advantages
High power density and efficiency
Wide operating temperature range
Robust design for demanding applications
Integrated NTC thermistor for temperature monitoring
Key Technical Parameters
IGBT Type: Trench Field Stop
Input: Standard
Configuration: Half Bridge Inverter
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 450A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
Quality and Safety Features
NTC Thermistor for temperature monitoring
Robust design for reliable operation
Compatibility
This IGBT module is suitable for use in a variety of power conversion and motor control applications.
Application Areas
Inverters
Motor drives
Power supplies
Solar/wind power converters
Product Lifecycle
This product is an active and widely used Infineon IGBT module. Replacement or upgrade options may be available as technology evolves.
Key Reasons to Choose This Product
High power density and efficiency
Wide operating temperature range
Robust and reliable design
Integrated temperature monitoring capability
Compatibility with a wide range of power conversion and motor control applications
