Manufacturer Part Number
CY7C25632KV18-550BZXI
Manufacturer
Infineon Technologies
Introduction
This is a high-performance, synchronous, quad data rate (QDR) II+ SRAM integrated circuit (IC) from Infineon Technologies.
Product Features and Performance
72Mbit memory capacity
4M x 18 memory organization
Parallel memory interface
Synchronous SRAM technology
Operates at up to 550MHz clock frequency
Supports voltage range of 1.7V to 1.9V
Wide operating temperature range of -40°C to 85°C
Product Advantages
High-speed performance for demanding applications
Low power consumption
Compact 165-FBGA (13x15) package
RoHS3 compliant
Key Technical Parameters
Memory Size: 72Mbit
Memory Organization: 4M x 18
Memory Interface: Parallel
Memory Type: Volatile SRAM
Clock Frequency: Up to 550MHz
Supply Voltage: 1.7V to 1.9V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant
Reliable and durable 165-FBGA (13x15) package
Compatibility
This SRAM IC is compatible with a wide range of electronic devices and systems that require high-speed, high-capacity memory.
Application Areas
High-performance computing
Networking equipment
Telecommunications systems
Industrial automation and control
Military and aerospace applications
Product Lifecycle
This product is currently in active production and available for purchase. Replacement or upgrade options may be available in the future as technology advances.
Key Reasons to Choose This Product
High-performance synchronous SRAM with up to 550MHz operation
Large 72Mbit memory capacity
Low power consumption
Wide operating temperature range
Compact and reliable 165-FBGA (13x15) package
RoHS3 compliance for environmental sustainability
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