Manufacturer Part Number
CY7C199-35VC
Manufacturer
Infineon Technologies
Introduction
Integrated circuit (IC) for memory applications
Asynchronous SRAM memory device
Product Features and Performance
256Kbit of storage capacity
32K x 8 memory organization
Parallel memory interface
35ns access time
35ns write cycle time
Operates on 4.5V to 5.5V power supply
0°C to 70°C operating temperature range
Product Advantages
High-speed asynchronous SRAM memory
Reliable and robust performance
Suitable for a wide range of memory applications
Key Technical Parameters
Memory type: Volatile SRAM
Memory size: 256Kbit
Memory organization: 32K x 8
Access time: 35ns
Write cycle time: 35ns
Supply voltage: 4.5V to 5.5V
Operating temperature: 0°C to 70°C
Quality and Safety Features
28-pin small outline (SOJ) package
Surface mount technology (SMT) mounting
RoHS non-compliant
Compatibility
Can be used in various electronic devices and systems requiring high-speed asynchronous SRAM memory
Application Areas
Embedded systems
Industrial control equipment
Telecommunication equipment
Computer systems
Automotive electronics
Product Lifecycle
This product is an active and available component
No information on pending discontinuation or availability of replacements/upgrades
Key Reasons to Choose This Product
High-performance asynchronous SRAM memory
Reliable and robust design
Wide operating temperature range
Suitable for a variety of memory applications
Readily available and supported by the manufacturer
CY7C199-35SCCypress Semiconductor
CY7C199-25VITRochester Electronics, LLCCY7C199 - 32K X 8 STATIC RAM