Manufacturer Part Number
CY7C1470BV33-200AXI
Manufacturer
Infineon Technologies
Introduction
The CY7C1470BV33-200AXI is a high-performance Synchronous SRAM device designed for high-speed data storage and retrieval.
Product Features and Performance
Technology: Synchronous SRAM, SDR
Memory Size: 72Mbit
Memory Organization: 2M x 36
Memory Interface: Parallel
Clock Frequency: 200 MHz
Access Time: 3 ns
Voltage Supply Range: 3.135V to 3.6V
Operating Temperature: -40°C to 85°C
Mounting Type: Surface Mount
Package: 100-LQFP
Series: NoBL™
Product Advantages
High-speed operation and quick access time enhance system performance.
Large memory size is suitable for advanced applications requiring considerable data storage.
Broad voltage supply range ensures adaptability to different power environments.
High reliability and durability in extreme temperature conditions.
Key Technical Parameters
Clock Frequency: 200 MHz
Access Time: 3 ns
Memory Size: 72Mbit
Operating Temperature: -40°C to 85°C
Voltage Supply Range: 3.135V to 3.6V
Quality and Safety Features
Operates effectively within a wide temperature range ensuring stability and reliability.
Robust package design minimizes risks of physical damage.
Compatibility
Compatible with systems that require high-speed SRAM with a parallel interface.
Application Areas
Telecommunication
Networking
High-performance computing
Product Lifecycle
Status: Last Time Buy
Indication: Nearing discontinuation, consider planning for alternatives or upgrades.
Key Reasons to Choose This Product
Extremely fast access time of 3 ns enhances system responsiveness.
High clock frequency of 200 MHz ensures efficient data handling.
Durable and reliable in a wide range of temperatures and power supply variations.
Large memory capacity suitable for complex computing tasks and data storage.
Part of the well-regarded NoBL™ series known for performance and reliability.
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CY7C1470BV33-200AXCInfineon TechnologiesIC SRAM 72MBIT PARALLEL 100TQFP