Manufacturer Part Number
CY7C1425KV18-250BZC
Manufacturer
Infineon Technologies
Introduction
High-performance synchronous quad data rate II SRAM
Product Features and Performance
36Mbit memory size
4M x 9 memory organization
Supports synchronous operations
250 MHz clock frequency for high-speed access
Parallel memory interface for standard connectivity
Synchronous, Quad Data Rate (QDR) II SRAM technology
Product Advantages
Optimized for high-bandwidth applications
Low latency and high data throughput
Supports burst of 2 read and write operations
Industrial temperature range ensures reliability
Key Technical Parameters
Memory type: Volatile SRAM
Memory format: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating temperature: -40°C ~ 85°C (TA)
Quality and Safety Features
Industrial temperature range compliant
Surface Mount 165-LBGA package for robustness and compactness
Constructed to meet high-quality standards
Compatibility
Parallel interface compatible with various standard logic and microcontroller products
Application Areas
High-speed networking equipment
Telecommunication infrastructure
Data storage systems
High-performance computing
Product Lifecycle
Product status: Active
Not nearing discontinuation
Replacements or upgrades may be available
Several Key Reasons to Choose This Product
High-speed access suitable for demanding applications
Large memory capacity for extensive storage needs
Reliable operation under a wide range of temperatures
Infineon Technologies' reputation for quality and performance
Broad compatibility enhances integration options
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