Manufacturer Part Number
CY7C1420KV18-250BZC
Manufacturer
Infineon Technologies
Introduction
CY7C1420KV18-250BZC is a 36Mbit synchronous SRAM memory device
Product Features and Performance
Volatile SRAM memory type
DDR II synchronous technology
Clock frequency of 250 MHz
Parallel memory interface
Memory size 36Mbit
1M x 36 memory organization
Product Advantages
High-speed operation
Supports DDR II interface for enhanced data transfer
Large memory capacity for extensive data storage
Parallel interface for straightforward connectivity
Key Technical Parameters
Supply voltage range from 1.7V to 1.9V
Operating temperature range 0°C to 70°C
165-LBGA package for surface mounting
Quality and Safety Features
Compliance with industry-standard safety and quality norms
Robust 165-FBGA package ensures safe operation and durability
Compatibility
Compatible with systems requiring a parallel SRAM interface
Supports various high-performance computing applications
Application Areas
High-speed networking equipment
Telecommunication infrastructure
Servers and high-performance computing
Product Lifecycle
Last Time Buy status indicates nearing end of life
Potential for replacements or upgrades to be considered
Several Key Reasons to Choose This Product
Fast access times suitable for high-speed computing tasks
Improved data retention with DDR II technology
Suitable for a range of industrial applications due to broad temperature range
Infineon Technologies' reliable manufacturing and support
The large 36Mbit capacity is ideal for memory-intensive operations
CY7C1420AV18-200BZICypress Semiconductor
CY7C1420AV18-167BZXCInfineon TechnologiesIC SRAM 36MBIT PAR 165FBGA