Manufacturer Part Number
CY7C1363C-133AXCT
Manufacturer
Infineon Technologies
Introduction
The CY7C1363C-133AXCT is a high-speed CMOS synchronous SRAM with a memory size of 9Mbit, organized as 512K x 18. It is designed to provide a volatile memory solution with a quick access time and high reliability.
Product Features and Performance
Memory Type: Volatile SRAM Synchronous, SDR
Memory Size: 9Mbit with 512K x 18 organization
Memory Interface: Parallel
Clock Frequency: 133 MHz
Access Time: 6.5 ns
Voltage Supply Ranges from 3.135V to 3.6V
Operating Temperature from 0°C to 70°C
Mounting Type: Surface Mount
Packaged in 100-LQFP using Tape & Reel (TR)
Product Advantages
Rapid access time of 6.5 ns enhances the overall speed of system operations.
A broad supply voltage range ensures adaptability in various applications.
Operates effectively in standard temperature ranges suitable for high-performance industrial applications.
Key Technical Parameters
Clock Frequency: 133 MHz
Access Time: 6.5 ns
Memory Size: 9Mbit
Voltage Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Quality and Safety Features
High reliability and durability under standard operating temperatures and voltages.
Components comply with industry quality standards ensuring robust performance.
Compatibility
Compatible with systems requiring high-speed SRAM with parallel interface.
Suitable for a variety of applications due to flexible 512K x 18 organization.
Application Areas
Embedded systems
High-performance computing
Communications infrastructure
Industrial applications
Product Lifecycle
Product Status: Active
Currently, there are no indications of discontinuation, and upgrades and replacements are available.
Several Key Reasons to Choose This Product
Superior access speed of 6.5 ns facilitates faster system performance.
Reliable over a broad voltage range and standard operating temperatures.
High memory capacity and easy integration into various applications with parallel interface.
Supported actively by Infineon Technologies with continuous availability of replacements or upgrades.
Optimal choice for applications demanding high-speed and high-capacity memory solutions.