Manufacturer Part Number
CY7C1354C-200AXC
Manufacturer
Infineon Technologies
Introduction
SRAM memory chip designed for high-speed applications
Product Features and Performance
Volatile memory type
Synchronous operation
2 ns access time
200 MHz clock frequency
SRAM - Synchronous, SDR technology
Memory size of 9Mbit
Memory organization 256K x 36
Parallel memory interface
Write Cycle Time - not specified
Product Advantages
Fast access time for high-speed applications
Consistent performance at a clock frequency of 200 MHz
Key Technical Parameters
Memory Type: Volatile SRAM
Memory Format: SRAM - Synchronous, SDR
Memory Size: 9Mbit
Memory Organization: 256K x 36
Clock Frequency: 200 MHz
Access Time: 3.2 ns
Voltage Supply: 3.135V to 3.6V
Operating Temperature Range: 0°C to 70°C
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)
Quality and Safety Features
Designed for standard operating temperatures (0°C to 70°C)
Compatibility
Compatible with systems requiring a 256K x 36 memory layout and a parallel memory interface
Application Areas
Suited for high-speed digital systems and computing requirements
Product Lifecycle
Obsolete status
Potential need to look for replacement or upgrade solutions
Several Key Reasons to Choose This Product
Fast access time beneficial for critical applications requiring speedy data retrieval
High clock frequency support ensuring compatibility with fast systems
Robust LQFP packaging for secure surface mounting
Reputable manufacturer with a track record of reliability in the memory sector
Part of the recognized NoBL™ series known for performance
CY7C1354C-200BGXCCypress Semiconductor
CY7C1354CV25-166AXCInfineon TechnologiesIC SRAM 9MBIT PARALLEL 100TQFP