Manufacturer Part Number
CY7C131-25JC
Manufacturer
Infineon Technologies
Introduction
Dual-Port SRAM designed for high-speed asynchronous read and write operations
Product Features and Performance
Volatile memory with Asynchronous Dual-Port SRAM technology
Memory Size of 8Kbit with 1K x 8 organization
Fast Access and Write Cycle Times at 25ns
Operates across a voltage range of 4.5V to 5.5V
Supports parallel memory interface for quick data transfer
Product Advantages
Enables efficient data storage and retrieval in multi-processor or multi-controller environments
Designed for applications requiring fast access to memory
Allows simultaneous read/write operations from dual ports
Highly suitable for applications with bidirectional data flow
Key Technical Parameters
Memory Size: 8Kbit
Memory Organization: 1K x 8
Write Cycle Time: 25ns
Access Time: 25ns
Voltage Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Quality and Safety Features
Manufactured by Infineon Technologies, known for producing reliable and high-quality semiconductors
Dependable operation across the specified temperature range
Compatibility
Compatible with systems requiring fast dual-port volatile memory implementations
Functional across a standard voltage range for SRAM technologies
Application Areas
Used in various computing and telecommunications systems
Suitable for digital signal processing and high-speed data buffering tasks
Product Lifecycle
Obsolete status, indicating end of production life
Potential for the existence of replacement or upgrade models available
Several Key Reasons to Choose This Product
Proven reliability from Infineon Technologies manufacturing
Fast access and write times for high-speed memory applications
Dual-Port feature allows for versatile, bidirectional communication between systems
Wide operational temperature range ensures stability across various environments
Suitable for legacy systems requiring 8Kbit volatile SRAM