Manufacturer Part Number
CY7C1245KV18-400BZC
Manufacturer
Infineon Technologies
Introduction
The CY7C1245KV18-400BZC is a high-performance, low-power Quad Data Rate II+ (QDR II+) synchronous SRAM (Static Random Access Memory) device. It is designed for networking, telecommunications, and other high-speed applications that require fast, reliable data access.
Product Features and Performance
36Mbit memory capacity
1M x 36 memory organization
400MHz clock frequency
Parallel memory interface
Synchronous SRAM technology
QDR II+ architecture for high-speed data access
7V to 1.9V operating voltage
0°C to 70°C operating temperature range
Surface mount packaging (165-LBGA)
Product Advantages
High-speed data access for demanding applications
Low power consumption for energy-efficient operation
Reliable and robust performance
Compatibility with a wide range of systems and applications
Key Reasons to Choose This Product
Exceptional performance and speed for high-bandwidth applications
Energy-efficient design for reduced power consumption
Proven reliability and durability for mission-critical systems
Seamless integration with a variety of networking and telecommunications equipment
Quality and Safety Features
Rigorously tested to ensure consistent quality and reliability
Compliance with relevant industry standards and regulations
Compatibility
Widely compatible with various networking, telecommunications, and other high-speed digital systems
Application Areas
Networking equipment (routers, switches, etc.)
Telecommunications infrastructure (base stations, gateways, etc.)
High-performance computing systems
Industrial automation and control systems
Medical imaging and diagnostic equipment
Product Lifecycle
The CY7C1245KV18-400BZC is an active product, and Infineon Technologies continues to manufacture and support it. There are no known equivalent or alternative models available at this time. If you have any questions or require further information, please contact our sales team through our website.
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