Manufacturer Part Number
CY7C109D-10VXI
Manufacturer
Infineon Technologies
Introduction
Infineon CY7C109D-10VXI is a high-performance, low-power 1Mbit asynchronous SRAM (Static Random Access Memory) device.
Product Features and Performance
1Mbit (128K x 8) memory capacity
10ns maximum access time
5V to 5.5V operating voltage
-40°C to 85°C operating temperature range
Parallel memory interface
10ns maximum write cycle time for word and page
Low power consumption
Product Advantages
High-speed performance
Low power operation
Wide temperature range
Reliable and durable
Key Technical Parameters
Memory Size: 1Mbit
Memory Organization: 128K x 8
Memory Type: Volatile SRAM
Access Time: 10ns
Write Cycle Time: 10ns
Operating Voltage: 4.5V to 5.5V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant
32-BSOJ (0.400", 10.16mm Width) package
Surface mount technology
Compatibility
Compatible with a wide range of electronic devices and systems that require high-performance, low-power SRAM memory.
Application Areas
Embedded systems
Industrial control
Telecommunication equipment
Consumer electronics
Automotive electronics
Product Lifecycle
This product is currently in active production and has no plans for discontinuation.
Replacement or upgrade options are available from Infineon Technologies.
Key Reasons to Choose This Product
High-speed performance with 10ns access time and 10ns write cycle time
Low power consumption for energy-efficient operation
Wide operating temperature range for versatile applications
Reliable and durable design with RoHS3 compliance
Compatibility with a wide range of electronic devices and systems
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