Manufacturer Part Number
CY7C1049BV33-20VC
Manufacturer
Infineon Technologies
Introduction
This is a 4Mbit Asynchronous SRAM (Static Random Access Memory) integrated circuit.
Product Features and Performance
4Mbit memory capacity
20ns access time
3V to 3.6V operating voltage
Parallel memory interface
20ns write cycle time for word and page
512K x 8 memory organization
Product Advantages
High-performance asynchronous SRAM
Wide operating voltage range
Fast access and write times
Efficient parallel interface
Key Technical Parameters
Memory Type: Volatile SRAM
Memory Size: 4Mbit
Access Time: 20ns
Memory Organization: 512K x 8
Operating Voltage: 3V to 3.6V
Operating Temperature: 0°C to 70°C
Quality and Safety Features
36-BSOJ (0.400", 10.16mm Width) surface mount package
RoHS non-compliant
Compatibility
Suitable for a wide range of embedded systems and applications that require high-performance asynchronous SRAM
Application Areas
Embedded systems
Industrial automation
Telecommunications equipment
Consumer electronics
Product Lifecycle
This product is still in active production and widely available.
Replacement or upgrade options are available from the manufacturer.
Several Key Reasons to Choose This Product
High memory capacity of 4Mbit
Fast access and write times for efficient performance
Wide operating voltage range for design flexibility
Parallel memory interface for easy integration
Availability and ongoing support from the manufacturer
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