Manufacturer Part Number
CY7C1010DV33-10ZSXIT
Manufacturer
infineon-technologies
Introduction
The CY7C1010DV33-10ZSXIT is a high-speed SRAM memory device from Infineon Technologies, featuring a size of 2Mbit and designed for optimal performance in a variety of demanding applications.
Product Features and Performance
Volatile memory type, utilizing SRAM - Asynchronous technology.
2Mbit memory size with an organization of 256K x 8, enabling efficient data storage and retrieval.
Parallel memory interface for rapid data access and manipulation.
Write Cycle Time and Access Time both marked at 10ns for fast operations.
Supports a voltage supply range of 3V to 3.6V, accommodating various power environments.
Operates across a wide temperature range from -40°C to 85°C.
Product Advantages
High-speed access time and write cycle catering to demanding application requirements.
Broad temperature range operation ensuring reliability in a variety of environments.
Surface mount technology for secure and compact integration into systems.
Key Technical Parameters
Memory Size: 2Mbit
Memory Organization: 256K x 8
Access Time: 10 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Compliance with industry standards for safety and quality assurance.
Reliability in diverse operating conditions due to extended temperature range capability.
Compatibility
Compatible with a wide range of devices and systems requiring high-speed SRAM with a parallel interface.
Surface mount technology ensures ease of integration into existing and new designs.
Application Areas
Suitable for a variety of applications needing high-speed data storage and retrieval including telecommunication, computing devices, industrial controls, and automotive systems.
Product Lifecycle
Product Status: Last Time Buy, indicating nearing the end of its production lifespan. Customers are advised to plan for replacement or upgrades, with possible alternative products from Infineon Technologies.
Several Key Reasons to Choose This Product
Optimal high-speed performance with 10ns access and write cycle times.
Robust design capable of operating in extreme temperatures ranging from -40°C to 85°C.
Versatile voltage supply compatibility (3V to 3.6V) catering to diverse power requirements.
Broad application potential from telecommunications to automotive systems.
Infineon Technologies' reliability and quality assurance in memory products.