Manufacturer Part Number
CY62177DV30LL-55BAXI
Manufacturer
Infineon Technologies
Introduction
High-speed 32Mbit Asynchronous SRAM
Product Features and Performance
32Mbit memory capacity
Asynchronous SRAM technology
Parallel memory interface for rapid data access
High-speed access time of 55ns
Write cycle time of 55ns for efficient data handling
Product Advantages
Robust high-speed data storage solution
Large memory size suitable for complex applications
Supports broad voltage range for versatile use
Optimized for high-performance electronic systems
Key Technical Parameters
Memory Size: 32Mbit
Memory Format: SRAM
Access Time: 55ns
Memory Interface: Parallel
Voltage Supply: 2.2V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
Extended operating temperature range for reliability in harsh conditions
Surface Mount technology for secure PCB attachment
Compatibility
Compatible with systems requiring high-speed SRAM with parallel interface
Application Areas
High-performance computing systems
Industrial control systems
Telecommunication infrastructure
Gaming consoles
Medical electronics
Product Lifecycle
Obsolete Product
Potential necessity to seek replacements or upgrades
Key Reasons to Choose This Product
Large memory capacity for data-intensive operations
Fast data access and write speeds for high-throughput applications
Wide operating voltage range, enhancing compatibility
Rigorous operating temperature specifications for harsh environments
Produced by Infineon, known for high-quality semiconductor products
Ideal for applications requiring reliable and fast memory access
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