Manufacturer Part Number
CY62148EV30LL-45ZSXIT
Manufacturer
Infineon Technologies
Introduction
High Speed 4Mbit SRAM from Infineon's MoBL® series suitable for high-performance memory applications.
Product Features and Performance
Asynchronous SRAM technology
4Mbit memory size
Organized as 512K x 8 bit
Parallel memory interface
Quick write cycle time of 45ns
Fast access time of 45ns
Voltage supply range from 2.2V to 3.6V
Active product status indicating current production
Product Advantages
Low power operation
High data bandwidth
Stable and reliable memory storage solutions
Key Technical Parameters
Memory Type: Volatile
Technology: Asynchronous SRAM
Memory Size: 4Mbit
Organization: 512K x 8
Write Cycle Time: 45ns
Access Time: 45ns
Voltage Supply: 2.2V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
Designed for harsh industrial temperature range
Reliable data retention
Compatibility
Parallel interface for integration with a range of microcontrollers and digital processing systems
Application Areas
Industrial electronics
Automotive systems
Communication infrastructure
Gaming and entertainment devices
Product Lifecycle
Product is currently active
Not reported as nearing discontinuation
Potential future upgrades or replacements likely to be available based on manufacturer's product line evolution
Several Key Reasons to Choose This Product
High-speed access time enables rapid retrieval of data
Large memory capacity for complex applications
Wide voltage supply range enhances compatibility
Rigorous quality ensures operation in extreme environments
Renowned manufacturer ensures reliability and ongoing support
CY62148ELL45ZSXICypress Semiconductor
CY62148VLL-70ZCT
CY62148EV30LL-55SXIInfineon TechnologiesIC SRAM 4MBIT PARALLEL 32SOIC