Manufacturer Part Number
BSZ12DN20NS3G
Manufacturer
Infineon Technologies
Introduction
The BSZ12DN20NS3G is a high-performance N-channel MOSFET from Infineon Technologies, designed for a wide range of power management applications.
Product Features and Performance
200V drain-to-source voltage (Vdss)
Low on-resistance (Rds(on)) of 125mΩ @ 5.7A, 10V
Fast switching speed with low gate charge (Qg) of 8.7nC @ 10V
Wide operating temperature range of -55°C to 150°C
Optimized for efficient power conversion and control
Product Advantages
Excellent power efficiency and thermal performance
Reliable and robust design for demanding applications
Compact and space-saving surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Maximum Gate-to-Source Voltage (Vgs(max)): ±20V
Continuous Drain Current (Id) @ 25°C: 11.3A
Input Capacitance (Ciss): 680pF @ 100V
Power Dissipation (Tc): 50W
Quality and Safety Features
Manufactured using Infineon's high-quality MOSFET technology
Robust design for reliable operation in harsh environments
Compatibility
Suitable for a wide range of power management applications, including motor drives, power supplies, and industrial electronics
Application Areas
Switchmode power supplies
Motor drives
Industrial electronics
Telecommunications equipment
Automotive electronics
Product Lifecycle
This product is currently in active production and is not nearing discontinuation
Replacements or upgrades may be available from Infineon as technology evolves
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Reliable and robust design for demanding applications
Compact and space-saving surface-mount package
Wide operating temperature range and compatibility with a variety of applications
Manufactured by a reputable semiconductor company, Infineon Technologies
