Manufacturer Part Number
BSS225H6327FTSA1
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor device - a single N-Channel MOSFET transistor.
Product Features and Performance
600V drain-to-source voltage rating
90mA continuous drain current at 25°C
45 ohm maximum on-resistance at 90mA, 10V
131pF maximum input capacitance at 25V
1W maximum power dissipation
Product Advantages
Suitable for high-voltage, high-power switching applications
Low on-resistance for efficient power conversion
Compact surface-mount package
Key Technical Parameters
N-Channel MOSFET transistor
600V drain-to-source voltage
±20V maximum gate-to-source voltage
3V maximum gate threshold voltage at 94A
5V to 10V drive voltage range
8nC maximum gate charge at 10V
Quality and Safety Features
RoHS3 compliant
Operating temperature range of -55°C to 150°C
Compatibility
Compatible with standard MOSFET drivers and control circuits
Application Areas
High-voltage power supplies
Motor drives
Inverters
Lighting ballasts
Switch-mode power supplies
Product Lifecycle
This product is an active and widely used MOSFET transistor. Replacement or upgraded parts are readily available from Infineon and other manufacturers.
Key Reasons to Choose This Product
High voltage and power handling capabilities
Low on-resistance for efficient power conversion
Compact surface-mount package for space-constrained designs
Wide operating temperature range
RoHS3 compliance for use in environmentally-conscious applications
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