Manufacturer Part Number
BSS139H6327XTSA1
Manufacturer
Infineon Technologies
Introduction
The BSS139H6327XTSA1 is a N-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
Depletion mode MOSFET
Drain-to-Source Voltage (Vdss) of 250V
Gate-to-Source Voltage (Vgs) range of ±20V
On-Resistance (RDS(on)) of 14Ω at 100A, 10V
Continuous Drain Current (ID) of 100mA at 25°C
Input Capacitance (Ciss) of 76pF at 25V
Power Dissipation (Ptot) of 360mW at 25°C
Product Advantages
High voltage handling capability
Low on-resistance for efficient power switching
Depletion mode operation
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: N-Channel
Gate Threshold Voltage (Vgs(th)) of 1V at 56A
Gate Charge (Qg) of 3.5nC at 5V
Quality and Safety Features
RoHS3 compliant
Packaged in PG-SOT23 surface mount package
Compatibility
Compatible with a variety of electronic circuits and applications requiring a high-voltage, low-resistance MOSFET
Application Areas
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
High voltage capability up to 250V
Low on-resistance for efficient power switching
Depletion mode operation for simplified control circuitry
RoHS3 compliance for use in a wide range of applications
Compact surface mount packaging for space-constrained designs