Manufacturer Part Number
BSS138NH6327XTSA2
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor device, specifically a single N-channel MOSFET transistor.
Product Features and Performance
N-channel MOSFET transistor
60V drain-source voltage (Vdss)
±20V gate-source voltage (Vgs)
5 ohm on-resistance (Rds(on)) at 230mA and 10V
230mA continuous drain current (Id)
41pF input capacitance (Ciss)
360mW power dissipation
4V gate threshold voltage (Vgs(th))
4nC gate charge (Qg)
Operating temperature range of -55°C to 150°C
Product Advantages
High efficiency due to low on-resistance
Suitable for a wide range of applications
Compact surface mount package
Reliable MOSFET technology
Key Technical Parameters
Drain-source voltage (Vdss): 60V
Gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 3.5 ohm
Continuous drain current (Id): 230mA
Input capacitance (Ciss): 41pF
Power dissipation: 360mW
Gate threshold voltage (Vgs(th)): 1.4V
Gate charge (Qg): 1.4nC
Quality and Safety Features
Compliant with RoHS3 directive
Reliable MOSFET technology
Compatibility
Suitable for a wide range of electronic circuits and applications
Application Areas
Switching circuits
Power management
Amplifiers
Motor control
General-purpose electronics
Product Lifecycle
This product is currently in production and widely available.
Replacement or upgrade options may be available, but the specific details should be confirmed with the manufacturer.
Several Key Reasons to Choose This Product
High efficiency due to low on-resistance
Wide operating temperature range
Compact surface mount package
Reliable MOSFET technology
Suitable for a variety of applications
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