Manufacturer Part Number
BSR316PH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
The BSR316PH6327XTSA1 is a P-channel MOSFET transistor from Infineon Technologies. It is part of the SIPMOS series and designed for surface mount applications.
Product Features and Performance
P-channel MOSFET design
Operating temperature range of -55°C to 150°C
Drain-to-source voltage (Vdss) of 100V
Maximum gate-to-source voltage (Vgs) of ±20V
On-resistance (Rds(on)) of 1.8Ω at 360mA and 10V
Continuous drain current (Id) of 360mA at 25°C
Input capacitance (Ciss) of 165pF at 25V
Power dissipation (Pd) of 500mW at Tc
Product Advantages
Robust MOSFET design for reliable performance
Wide operating temperature range
Low on-resistance for efficient power switching
Small surface mount package (TO-236-3, SC-59, SOT-23-3)
Tape and reel packaging for automated assembly
Key Technical Parameters
Drain-to-source voltage (Vdss): 100V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 1.8Ω
Continuous drain current (Id): 360mA
Input capacitance (Ciss): 165pF
Power dissipation (Pd): 500mW
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Compatible with various electronic circuits and designs requiring a P-channel MOSFET transistor
Application Areas
General electronic circuits
Power management
Switching applications
Automotive electronics
Product Lifecycle
Currently in production
No known discontinuation plans
Replacement parts and upgrades may be available from Infineon
Key Reasons to Choose
Robust and reliable MOSFET design
Wide operating temperature range
Low on-resistance for efficient power switching
Small surface mount package for compact designs
RoHS3 compliance for use in diverse applications
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