BSP89H6327XTSA1 - Infineon Technologies

Manufacturer Part Number

BSP89H6327XTSA1

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

ROHS3 Compliant

TO-261-4, TO-261AA Package

-55°C ~ 150°C Operating Temperature

240V Drain to Source Voltage (Vdss)

±20V Vgs (Max)

6 Ohm Rds On (Max) @ 350mA, 10V

MOSFET (Metal Oxide) Technology

350mA Continuous Drain Current (Id) @ 25°C

140 pF Input Capacitance (Ciss) (Max) @ 25V

8W Power Dissipation (Max)

N-Channel FET Type

8V Vgs(th) (Max) @ 108A

5V, 10V Drive Voltage (Max Rds On, Min Rds On)

4 nC Gate Charge (Qg) (Max) @ 10V

Surface Mount Mounting Type

Product Advantages

ROHS3 Compliant

Wide Operating Temperature Range

High Voltage Capability

Low On-Resistance

High Current Handling Capability

Low Input Capacitance

High Power Dissipation

N-Channel FET Provides Efficient Switching

Key Technical Parameters

Drain to Source Voltage (Vdss): 240V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V

Continuous Drain Current (Id) @ 25°C: 350mA

Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25V

Power Dissipation (Max): 1.8W

Vgs(th) (Max) @ Id: 1.8V @ 108A

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10V

Quality and Safety Features

ROHS3 Compliant

Compatibility

Compatible with a wide range of electronic circuits and applications requiring high voltage, high current MOSFET transistors.

Application Areas

Suitable for use in a variety of electronic circuits and applications requiring high voltage, high current MOSFET transistors, such as power supplies, motor drives, and industrial electronics.

Product Lifecycle

Current product, not nearing discontinuation.

Replacement or upgrade options may be available from Infineon Technologies or other MOSFET manufacturers.

Key Reasons to Choose This Product

ROHS3 compliance for environmental responsibility

Wide operating temperature range for versatility

High voltage and current handling capabilities

Low on-resistance for efficient power delivery

Low input capacitance for fast switching

High power dissipation for thermal management

N-channel FET design for efficient switching performance