Manufacturer Part Number
BSP315PH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
High-performance P-channel power MOSFET transistor with low on-state resistance and fast switching capabilities.
Product Features and Performance
Robust and reliable design
Optimized for high-frequency switching applications
Low gate charge for efficient switching
Low on-state resistance for low conduction losses
High power handling capability
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent power efficiency
Compact and space-saving design
Suitable for a wide range of applications
Meets RoHS compliance requirements
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 800mΩ @ 1.17A, 10V
Continuous Drain Current (Id): 1.17A @ 25°C
Input Capacitance (Ciss): 160pF @ 25V
Power Dissipation (Ptot): 1.8W @ 25°C
Quality and Safety Features
RoHS compliant
Reliable and durable design
Stringent quality control measures
Compatibility
Suitable for a wide range of electronic applications, including power supplies, motor drives, and industrial control systems.
Application Areas
Power conversion and control
Motor control and drives
Switching power supplies
Industrial automation and control
Product Lifecycle
This product is currently in production and widely available.
Replacement or upgrade options may be available from Infineon or other manufacturers, as technology continues to evolve.
Key Reasons to Choose This Product
Excellent power efficiency and low conduction losses
Fast switching capabilities for high-frequency applications
Robust and reliable design for long-term performance
Compact and space-saving package
Meets RoHS compliance requirements for environmental sustainability
Wide operating temperature range for versatile applications
BSP315PINFINEONINEON