BSP295H6327XTSA1 - Infineon Technologies

Manufacturer Part Number

BSP295H6327XTSA1

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel MOSFET transistor for power management and control applications.

Product Features and Performance

60V drain-to-source voltage rating

300mΩ maximum on-resistance

8A continuous drain current at 25°C

Very low gate charge and input capacitance for high-frequency switching

Supports wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent power efficiency through low on-resistance

Enables high-frequency switching for power conversion

Reliable operation across broad temperature range

Compact surface-mount package

Key Technical Parameters

Vdss: 60V

Vgs(max): ±20V

Rds(on) (max): 300mΩ @ 1.8A, 10V

Ciss (max): 368pF @ 25V

Pd (max): 1.8W

Quality and Safety Features

RoHS3 compliant

MOSFET technology for high reliability

Compatibility

Suitable for a variety of power management and control applications.

Application Areas

Switch-mode power supplies

Motor drives

Industrial controls

Power conversion circuits

Product Lifecycle

Currently in active production. Replacement options may be available from Infineon or other manufacturers.

Key Reasons to Choose

Excellent power efficiency and switching performance

Wide operating temperature range for rugged applications

Compact surface-mount package for space-constrained designs

Part of Infineon's reliable SIPMOS series