Manufacturer Part Number
BSP135H6327XTSA1
Manufacturer
Infineon Technologies
Introduction
High-performance power MOSFET transistor
Suitable for a wide range of power electronics applications
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
High drain-to-source voltage up to 600V
Low on-resistance of 45Ω @ 120mA, 10V
Fast switching capability with low input capacitance of 146pF
Depletion mode operation
8W maximum power dissipation
Product Advantages
Excellent thermal management for reliable operation
Efficient power conversion with low conduction losses
Versatile for various power electronics designs
High voltage handling capability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 120mA
Input Capacitance (Ciss): 146pF
Gate Charge (Qg): 4.9nC
Quality and Safety Features
RoHS3 compliant
Reliable surface mount package (TO-261-4, TO-261AA)
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Lighting ballasts
Household appliances
Industrial equipment
Product Lifecycle
Current product, no discontinuation plans
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent performance in high-voltage, high-power applications
Efficient power conversion with low conduction losses
Reliable operation over a wide temperature range
Versatile for various power electronics designs
Compact surface mount package for space-constrained designs