Manufacturer Part Number
BSP129L6327
Manufacturer
Infineon Technologies
Introduction
This is a discrete semiconductor product, specifically a single transistor MOSFET (Metal Oxide Semiconductor Field-Effect Transistor).
Product Features and Performance
N-Channel MOSFET
Depletion mode operation
Drain-to-Source voltage (Vdss) of 240V
Maximum gate-to-source voltage (Vgs) of ±20V
On-state resistance (Rds(on)) of 6Ω @ 350mA, 10V
Continuous drain current (Id) of 350mA at 25°C
Input capacitance (Ciss) of 108pF @ 25V
Power dissipation (Max) of 1.8W at 25°C
Operating temperature range of -55°C to 150°C
Product Advantages
Reliable and robust MOSFET design
Wide operating voltage and temperature range
Low on-state resistance for efficient power handling
Suitable for various power electronics applications
Key Technical Parameters
Drain-to-Source voltage (Vdss): 240V
Gate-to-Source voltage (Vgs): ±20V
On-state resistance (Rds(on)): 6Ω @ 350mA, 10V
Continuous drain current (Id): 350mA at 25°C
Input capacitance (Ciss): 108pF @ 25V
Power dissipation (Max): 1.8W at 25°C
Quality and Safety Features
RoHS3 compliant
Packaged in a PG-SOT223-4-21 (TO-261-4, TO-261AA) surface mount package
Compatibility
This MOSFET is suitable for use in various power electronics applications, such as power supplies, motor drives, and switch-mode power converters.
Application Areas
Power electronics
Motor control
Switch-mode power supplies
Various power conversion and control applications
Product Lifecycle
The BSP129L6327 is an active product, and Infineon Technologies continues to manufacture and support it. There are no immediate plans for discontinuation, and replacement or upgraded options may be available in the future.
Key Reasons to Choose This Product
Reliable and robust MOSFET design
Wide operating voltage and temperature range
Low on-state resistance for efficient power handling
Suitable for a variety of power electronics applications
Compliance with RoHS3 standards for environmental responsibility