Manufacturer Part Number
BSO303SPH
Manufacturer
Infineon Technologies
Introduction
This is a P-channel MOSFET transistor from Infineon Technologies, part of the SIPMOS series.
Product Features and Performance
Operates in the -55°C to 150°C temperature range
30V drain-to-source voltage
Maximum gate-to-source voltage of ±20V
On-resistance of 21mΩ at 9.1A and 10V
Continuous drain current of 7.2A at 25°C
Input capacitance of 2330pF at 25V
Maximum power dissipation of 1.56W at 25°C
Gate threshold voltage of 2V at 100A
Gate charge of 54nC at 10V
Product Advantages
High current handling capability
Low on-resistance for efficient power conversion
Wide temperature range
Surface mount package for compact designs
Key Technical Parameters
MOSFET technology
P-channel FET type
8-SOIC (0.154", 3.90mm) package
ROHS3 compliant
Quality and Safety Features
ROHS3 compliant for environmental safety
Compatibility
Suitable for a variety of power conversion and control applications
Application Areas
Power supplies
Motor drives
Switching regulators
Amplifiers
Industrial controls
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High current and power handling
Low on-resistance for efficient operation
Wide temperature range for versatile use
Surface mount package for compact designs
ROHS3 compliance for environmental responsibility
