Manufacturer Part Number
BSM400GA170DLS
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor device in the form of an IGBT (Insulated Gate Bipolar Transistor) module.
Product Features and Performance
High power handling capability up to 3120 W
Wide operating temperature range up to 150°C
Low input capacitance of 27 nF at 25 V
High collector-emitter breakdown voltage of 1700 V
High collector current rating of 800 A
Low collector-emitter saturation voltage of 3.3 V at 15 V, 400 A
Product Advantages
Efficient power switching performance
High reliability and ruggedness
Compact and integrated module design
Key Technical Parameters
Package: Module
Voltage Collector Emitter Breakdown (Max): 1700 V
Current Collector (Ic) (Max): 800 A
Vce(on) (Max) @ Vge, Ic: 3.3 V @ 15 V, 400 A
Quality and Safety Features
Suitable for high-power industrial applications
Compliance with relevant safety standards
Compatibility
This IGBT module is designed for use in various power electronic systems and equipment.
Application Areas
Motor drives
Power supplies
Renewable energy systems
Industrial automation and control
Product Lifecycle
This product is an active and widely used IGBT module.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High power handling and efficiency
Robust and reliable performance
Compact and integrated module design
Suitability for a wide range of industrial applications
