Manufacturer Part Number
BSM30GD60DLCE3224
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistors IGBTs Modules
Product Features and Performance
Module packaging
150°C (TJ) operating temperature
135W maximum power
NPT IGBT type
Standard input
Single configuration
3nF input capacitance @ 25V
600V max collector-emitter breakdown voltage
No NTC thermistor
40A max collector current
45V max collector-emitter saturation voltage @ 15V, 30A
500A max collector cutoff current
Chassis mount
Product Advantages
High power handling capability
Wide operating temperature range
Reliable NPT IGBT technology
Simple standard input configuration
Low input capacitance
High voltage blocking capability
Compact module packaging
Key Technical Parameters
Power rating: 135W
Voltage rating: 600V
Current rating: 40A
Switching performance: 1.3nF input capacitance
Quality and Safety Features
High temperature operation up to 150°C
Robust module construction
Compatibility
Suitable for a variety of power conversion and motor control applications
Application Areas
Power electronics
Motor drives
Inverters
Converters
Product Lifecycle
Currently available, no discontinuation planned
Key Reasons to Choose
High power density
Reliable NPT IGBT technology
Wide operating temperature range
Simple standard configuration
Compact module packaging
BSM300GB170DN2Cypress Semiconductor (Infineon Technologies)IGBT Module