Manufacturer Part Number
BSM150GB60DLCHOSA1
Manufacturer
Infineon Technologies
Introduction
High-power discrete semiconductor product
Transistor IGBT (Insulated Gate Bipolar Transistor) module
Product Features and Performance
Capable of handling high power up to 595W
Wide operating temperature range of -40°C to 125°C
Low input capacitance of 6.5nF @ 25V
High collector-emitter breakdown voltage of 600V
High collector current rating of 180A
Low collector-emitter saturation voltage of 2.45V @ 15V, 150A
Product Advantages
Efficient power handling and thermal management
Wide temperature tolerance for diverse applications
Low switching losses for improved energy efficiency
Robust design for reliable operation
Key Technical Parameters
Packaging: Module
Mounting Type: Chassis Mount
Operating Temperature Range: -40°C to 125°C
Power Rating: 595W
Input Capacitance (Cies): 6.5nF @ 25V
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 180A
Collector-Emitter Saturation Voltage: 2.45V @ 15V, 150A
Quality and Safety Features
No NTC thermistor included
Collector current cutoff rating of 500A
Compatibility
Standard input configuration
Single-transistor module design
Application Areas
Power conversion and control systems
Industrial motor drives
Renewable energy systems
Welding equipment
Uninterruptible power supplies (UPS)
Product Lifecycle
Currently available
No indications of discontinuation
Replacement or upgrade options may be available from Infineon
Key Reasons to Choose This Product
High power handling and efficiency
Wide operating temperature range
Low switching losses
Robust and reliable design
Versatile applications in industrial and power electronics
