Manufacturer Part Number
BSL307SP
Manufacturer
Infineon Technologies
Introduction
The BSL307SP is a discrete semiconductor product, specifically a P-channel MOSFET transistor.
Product Features and Performance
Operates in the temperature range of -55°C to 150°C
Drain to Source Voltage (Vdss) of 30V
Maximum Gate-Source Voltage (Vgs) of ±20V
Low On-Resistance (Rds(on)) of 43mΩ at 5.5A and 10V
Continuous Drain Current (Id) of 5.5A at 25°C
Input Capacitance (Ciss) of 805pF at 25V
Maximum Power Dissipation of 2W at 25°C
Product Advantages
Low on-resistance for efficient power switching
Wide operating temperature range
Suitable for various power management applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: P-Channel
Threshold Voltage (Vgs(th)) of 2V at 40A
Drive Voltage Range: 4.5V to 10V
Quality and Safety Features
RoHS non-compliant
Packaged in a SOT-23-6 Thin, TSOT-23-6 surface mount package
Compatibility
Supplier Device Package: PG-TSOP6-6
Tape and Reel (TR) packaging
Application Areas
Power management
Switching circuits
Power conversion
Product Lifecycle
The BSL307SP is an active product from Infineon Technologies.
Key Reasons to Choose This Product
Efficient power switching due to low on-resistance
Wide operating temperature range for diverse applications
Compact surface mount package for space-constrained designs
Reliable performance in power management and switching circuits
