Manufacturer Part Number
BSL207SP
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
P-Channel MOSFET
Vds: 20V, Vgs: ±12V
Rds(on): 41mOhm @ 6A, 4.5V
Id: 6A @ 25°C
Ciss: 1007pF @ 15V
Power Dissipation: 2W
Product Advantages
Optimized for high-performance applications
Low on-resistance for improved efficiency
Suitable for high-frequency switching
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
Vgs(th): 1.2V @ 40A
Drive Voltage: 2.5V (max Rds(on)), 4.5V (min Rds(on))
Gate Charge: 20nC @ 4.5V
Quality and Safety Features
RoHS non-compliant
Operating Temperature: -55°C to 150°C
Compatibility
Packaging: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6
Application Areas
Suitable for high-performance, high-frequency switching applications
Product Lifecycle
Current product, no information on discontinuation or replacements
Key Reasons to Choose This Product
Optimized for high-performance applications
Low on-resistance for improved efficiency
Suitable for high-frequency switching
Wide operating temperature range