Manufacturer Part Number
BSC520N15NS3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET with ultra-low on-state resistance
Product Features and Performance
Optimized for high-efficiency switching in power conversion applications
Extremely low on-state resistance for reduced conduction losses
Fast switching performance for high-frequency operation
Robust design for superior reliability
Product Advantages
Industry-leading RDS(on) for superior efficiency
Compact PG-TDSON-8-5 package for space-saving designs
Wide operating temperature range of -55°C to 150°C
High current capability up to 21A
Key Technical Parameters
Drain-Source Voltage (VDS): 150V
Gate-Source Voltage (VGS): ±20V
On-State Resistance (RDS(on)): 52mΩ @ 18A, 10V
Continuous Drain Current (ID): 21A @ 25°C
Input Capacitance (Ciss): 890pF @ 75V
Power Dissipation (Ptot): 57W @ Tc
Quality and Safety Features
Compliant with RoHS3 directive
Robust design for high reliability
Compatibility
Suitable for a wide range of power conversion applications, including:
Switch-mode power supplies
Motor drives
Inverters
Industrial electronics
Application Areas
Power conversion
Motor control
Renewable energy systems
Industrial automation
Product Lifecycle
Currently in active production, no plans for discontinuation. Replacement or upgraded models may be available in the future.
Key Reasons to Choose This Product
Industry-leading low on-state resistance for superior efficiency
Compact and space-saving package design
Wide operating temperature range for reliable performance
High current capability for demanding applications
Robust design for long-term reliability
