Manufacturer Part Number
BSC320N20NS3GATMA1
Manufacturer
Infineon Technologies
Introduction
The BSC320N20NS3GATMA1 is a high-performance N-channel MOSFET transistor from Infineon Technologies, designed for a wide range of power electronic applications.
Product Features and Performance
200V drain-to-source voltage
32mΩ maximum ON-state resistance
36A continuous drain current at 25°C
2350pF maximum input capacitance
125W maximum power dissipation
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent performance in terms of low on-resistance and high current capability
Optimized for efficient power conversion and control
Reliable and robust design for demanding applications
Compact and thermally efficient package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±20V
ON-state Resistance (Rds(on)): 32mΩ
Continuous Drain Current (Id): 36A
Input Capacitance (Ciss): 2350pF
Power Dissipation (Ptot): 125W
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
Suitable for a wide range of power electronic applications, including motor drives, power supplies, and inverters.
Application Areas
Power conversion and control
Motor drives
Switching power supplies
Inverters
Industrial automation
Product Lifecycle
Currently in production
No information on discontinuation or replacements
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance and high current capability
Optimized for efficient power conversion and control
Reliable and robust design for demanding applications
Compact and thermally efficient package
Wide operating temperature range
