Manufacturer Part Number
BSC117N08NS5ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance power MOSFET designed for efficient power conversion and switching applications
Product Features and Performance
N-channel power MOSFET with low on-resistance (RDS(on))
Optimized for low gate charge and high-speed switching
Supports wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent thermal performance and power dissipation
Robust design with low gate charge for efficient switching
Suitable for a variety of power conversion and control applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 80 V
Maximum Gate-Source Voltage (Vgs): ±20 V
On-Resistance (RDS(on)): 11.7 mΩ @ 25 A, 10 V
Continuous Drain Current (ID): 49 A (at 25°C)
Input Capacitance (Ciss): 1300 pF @ 40 V
Power Dissipation: 2.5 W (at 25°C), 50 W (at case temperature)
Quality and Safety Features
Compliant with RoHS3 directive
Manufactured using advanced MOSFET technology for reliable performance
Compatibility
Suitable for a wide range of power conversion and switching applications
Application Areas
Power supplies
Motor drives
Power inverters
Switching regulators
Industrial automation equipment
Product Lifecycle
Current production model, no discontinuation plans
Several Key Reasons to Choose This Product
Excellent thermal performance and power dissipation
Low on-resistance and gate charge for efficient switching
Robust and reliable design for demanding applications
Wide operating temperature range for various environments
Compatibility with diverse power conversion and control systems
