Manufacturer Part Number
BSC109N10NS3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with low on-resistance and optimized switching performance for power conversion and motor control applications.
Product Features and Performance
Low on-resistance for high efficiency
Optimized switching performance for fast switching
Suitable for high frequency switching applications
Robust device structure for high reliability
Product Advantages
Excellent thermal performance
High power density
Efficient power conversion
Reliable operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 10.9 mOhm @ 46 A, 10 V
Current Continuous Drain (Id) @ 25°C: 63 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Power Dissipation (Max): 78 W (Tc)
Vgs(th) (Max) @ Id: 3.5 V @ 45 A
Drive Voltage (Max Rds On, Min Rds On): 6 V, 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Robust device structure for high reliability
Compatibility
Surface mount package (PG-TDSON-8-1) suitable for automated assembly
Application Areas
Power conversion
Motor control
Industrial applications
Product Lifecycle
The BSC109N10NS3GATMA1 is an actively supported product. Replacements and upgrades may be available in the future.
Several Key Reasons to Choose This Product
Excellent thermal performance and high power density for efficient power conversion
Optimized switching performance for fast and reliable switching
Robust device structure for high reliability
Compatibility with automated assembly processes
