Manufacturer Part Number
BSC097N06NSATMA1
Manufacturer
Infineon Technologies
Introduction
The BSC097N06NSATMA1 is a high-performance, N-channel power MOSFET from Infineon Technologies' OptiMOS series. It is designed for a wide range of power conversion and control applications.
Product Features and Performance
60V drain-to-source voltage
7mΩ maximum on-resistance at 40A, 10V
46A continuous drain current at 25°C
Low input capacitance of 1075pF at 30V
Supports up to 2.5W power dissipation at 25°C and 36W at the case
Product Advantages
Efficient power conversion with low conduction losses
Reliable operation in harsh environments with a wide temperature range of -55°C to 150°C
Optimized for high-frequency switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 9.7mΩ @ 40A, 10V
Continuous Drain Current (Id): 46A @ 25°C
Input Capacitance (Ciss): 1075pF @ 30V
Power Dissipation (Pd): 2.5W @ 25°C, 36W @ case temperature
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and widely available.
Replacements or upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent efficiency and low conduction losses for improved power conversion performance
Robust and reliable operation in harsh environments with a wide temperature range
Optimized for high-frequency switching applications
RoHS3 compliance for use in eco-friendly designs
Compatibility with a wide range of power conversion and control applications
BSC097N06NSTexas Instruments