Manufacturer Part Number
BSC0802LSATMA1
Manufacturer
Infineon Technologies
Introduction
The BSC0802LSATMA1 is a high-performance N-channel MOSFET transistor from Infineon Technologies' OptiMOS 5 series.
Product Features and Performance
100V drain-source voltage rating
4 mOhm maximum on-resistance at 50A, 10V
20A continuous drain current at 25°C ambient temperature
100A continuous drain current at 25°C case temperature
6500 pF maximum input capacitance at 50V
156W maximum power dissipation at 25°C case temperature
-55°C to 150°C operating temperature range
Product Advantages
Low on-resistance for improved efficiency
High current capability for demanding applications
Wide operating temperature range for versatile use
Small package size for compact design
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.4 mOhm
Drain Current (Id): 20A (ambient), 100A (case)
Input Capacitance (Ciss): 6500 pF
Power Dissipation (Tc): 156W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Surface mount package (PG-TDSON-8-7)
Suitable for various power electronics and motor control applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Automotive electronics
Product Lifecycle
This product is currently in production and available for purchase.
Replacement or upgraded products may be available in the future, but no specific information is known at this time.
Key Reasons to Choose This Product
Excellent performance with low on-resistance and high current capability
Wide operating temperature range for versatile applications
Small package size for compact design
Proven quality and reliability from Infineon Technologies
RoHS3 compliance for environmental considerations
