Manufacturer Part Number
BSC036NE7NS3GATMA1
Manufacturer
Infineon Technologies
Introduction
High performance N-channel MOSFET in PowerTDFN package for high power and high efficiency applications.
Product Features and Performance
Optimized for high efficiency power conversion
Very low on-resistance for low conduction losses
High current handling capability up to 100A
Wide operating temperature range from -55°C to 150°C
High avalanche energy rating for robustness
Fast switching speed for high frequency operation
Optimized gate charge for efficient gate drive
Product Advantages
Excellent thermal performance
High power density
Optimized for high efficiency power conversion
Robust and reliable design
Key Technical Parameters
Drain to Source Voltage (Vdss): 75V
On-Resistance (Rds(on)): 3.6mΩ
Continuous Drain Current (Id): 100A
Input Capacitance (Ciss): 4400pF
Power Dissipation (Tc): 156W
Quality and Safety Features
RoHS3 compliant
Qualified to AEC-Q101 automotive standard
Compatibility
Universal compatibility for high power electronic applications.
Application Areas
High power switch mode power supplies
Class D audio amplifiers
Traction inverters
Motor drives
Electric vehicles
Industrial automation
Product Lifecycle
This product is actively supported and available for purchase. No plans for discontinuation at this time. Upgrades and replacements may become available in the future.
Key Reasons to Choose this Product
Industry leading low on-resistance for high efficiency
High current and power handling capability
Robust and reliable design for demanding applications
Optimized for high frequency high power conversion
Wide operating temperature range for versatile use
Automotive grade quality and safety compliance
