Manufacturer Part Number
BSC030N08NS5ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
80V drain-to-source voltage
3 mΩ on-resistance at 50A, 10V
100A continuous drain current at 25°C
Low input capacitance of 5600 pF
Wide operating temperature range of -55°C to 150°C
Optimized for high-efficiency power conversion applications
Product Advantages
Ultra-low on-resistance for high efficiency
High current handling capability
Compact surface-mount package
Excellent thermal performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 80V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3 mΩ @ 50A, 10V
Continuous Drain Current (Id): 100A @ 25°C
Input Capacitance (Ciss): 5600 pF @ 40V
Power Dissipation: 2.5W (Ta), 139W (Tc)
Gate Charge (Qg): 76 nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Inverters
DC-DC converters
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and availability is good.
Key Reasons to Choose This Product
Ultra-low on-resistance for high efficiency
High current handling capability for demanding applications
Compact surface-mount package for space-constrained designs
Excellent thermal performance for reliable operation
Wide operating temperature range for versatile use
RoHS3 compliance for environmentally-friendly applications
