Manufacturer Part Number
BSC027N04LSGATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor optimized for high-efficiency power conversion applications
Product Features and Performance
Low on-resistance (RDS(on)) for high efficiency
Fast switching speed for high-frequency operation
Low gate charge (Qg) for low driving power
Robust avalanche capability
Designed for high-power density and high-efficiency power conversion
Product Advantages
Excellent thermal management
High power density
Efficient power conversion
Reliable and robust performance
Key Technical Parameters
Drain-to-Source Voltage (VDS): 40V
Maximum Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 2.7mΩ @ 50A, 10V
Continuous Drain Current (ID): 24A (Ta), 100A (Tc)
Input Capacitance (Ciss): 6800pF @ 20V
Power Dissipation: 2.5W (Ta), 83W (Tc)
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and long lifespan
Compatibility
Compatible with high-frequency, high-efficiency power conversion applications
Application Areas
Switching power supplies
Motor drives
Solar inverters
Uninterruptible power supplies (UPS)
Industrial and automotive power electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and power density
Fast switching speed for high-frequency operation
Robust and reliable performance
Optimized for high-power, high-efficiency power conversion applications
