Manufacturer Part Number
BSC016N06NSATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET with low on-resistance for power management applications
Product Features and Performance
Optimized for high-efficiency power conversion
Extremely low on-resistance down to 1.6 mΩ
High current capability up to 100A
Fast switching and low gate charge
Wide operating temperature range from -55°C to 150°C
Product Advantages
Excellent thermal and electrical performance
Efficient power conversion
Compact design with surface mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs) (Max): ±20V
On-Resistance (Rds(on)): 1.6mΩ @ 50A, 10V
Continuous Drain Current (Id): 30A (Ta), 100A (Tc)
Input Capacitance (Ciss): 5200pF @ 30V
Power Dissipation: 2.5W (Ta), 139W (Tc)
Quality and Safety Features
ROHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of power management applications
Application Areas
Switching power supplies
DC-DC converters
Motor drives
Industrial and consumer electronics
Product Lifecycle
Active product
Replacements or upgrades may be available
Key Reasons to Choose This Product
Exceptional efficiency and power density
Extremely low on-resistance for minimized power losses
High current capability for demanding applications
Fast switching and low gate charge for improved system performance
Wide operating temperature range for versatile use cases
Compact surface mount package for space-constrained designs
