Manufacturer Part Number
BSC009NE2LSATMA1
Manufacturer
Infineon Technologies
Introduction
Highly efficient N-Channel MOSFET with low on-resistance for power switching applications
Product Features and Performance
Low on-resistance for improved efficiency
High current handling capability up to 100A
Fast switching speed for high-frequency operation
Wide operating temperature range from -55°C to 150°C
Robust and reliable design
Product Advantages
Optimized for high-efficiency power conversion
Compact and space-saving package
Excellent thermal performance
Enables high-power density designs
Key Technical Parameters
Drain to Source Voltage (Vdss): 25V
Max Drain Current (Id): 41A (Ta), 100A (Tc)
On-resistance (Rds(on)): 0.9mΩ @ 30A, 10V
Input Capacitance (Ciss): 5800pF @ 12V
Gate Charge (Qg): 126nC @ 10V
Quality and Safety Features
RoHS3 compliant
Robust and reliable design for long-term operation
Compatibility
Compatible with various power conversion and motor control applications
Application Areas
Switching power supplies
Inverters
Motor drives
Industrial automation
Telecommunication equipment
Product Lifecycle
Currently in production
Replacement and upgrade options available
Key Reasons to Choose This Product
Exceptional efficiency and power density
Reliable and robust performance
Optimized for high-frequency, high-current applications
Compact and space-saving package
Excellent thermal management capability
