Manufacturer Part Number
BFS483H6327XTSA1
Manufacturer
Infineon Technologies
Introduction
This is a dual NPN bipolar junction transistor (BJT) designed for radio frequency (RF) applications.
Product Features and Performance
Transistor Type: 2 NPN (Dual)
Frequency Transition: 8GHz
Gain: 19dB
Noise Figure: 0.9dB to 1.4dB @ 900MHz to 1.8GHz
Power Rating: 450mW
Collector-Emitter Breakdown Voltage: 12V
Collector Current (Max): 65mA
DC Current Gain (hFE): 70 min @ 15mA, 8V
Product Advantages
High frequency performance
Low noise figure
Compact surface mount package
Key Technical Parameters
RoHS Compliant
Operating Temperature: 150°C (TJ)
Package: 6-VSSOP, SC-88, SOT-363
Quality and Safety Features
RoHS3 Compliant
Compatibility
This transistor can be used in a variety of RF applications.
Application Areas
Radio Frequency (RF) circuits
Wireless communication devices
Amplifiers
Mixers
Oscillators
Product Lifecycle
This product is currently available and actively supported by the manufacturer. Replacements or upgrades may be available in the future.
Key Reasons to Choose This Product
High frequency performance up to 8GHz
Low noise figure for improved signal quality
Compact surface mount package for space-constrained designs
RoHS compliance for environmental responsibility
Reliable performance from a trusted manufacturer, Infineon Technologies