Manufacturer Part Number
BFS17PE6327HTSA1
Manufacturer
Infineon Technologies
Introduction
This is a high-frequency, low-noise NPN bipolar junction transistor (BJT) intended for radio frequency (RF) applications.
Product Features and Performance
High transition frequency (fT) of 1.4GHz
Low noise figure of 3.5dB to 5dB at 800MHz
Capable of operating at up to 150°C junction temperature
Power dissipation of up to 280mW
Collector-emitter breakdown voltage of 15V
Collector current of up to 25mA
Product Advantages
Excellent high-frequency performance for RF applications
Low noise characteristics for sensitive RF circuits
Wide operating temperature range
Compact surface-mount package
Key Technical Parameters
Transistor Type: NPN
DC Current Gain (hFE): Min 40 @ 2mA, 1V
Transition Frequency (fT): 1.4GHz
Noise Figure: 3.5dB to 5dB @ 800MHz
Collector-Emitter Breakdown Voltage: 15V
Collector Current (Ic): Max 25mA
Power Dissipation: Max 280mW
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Housed in a compact and reliable PG-SOT23 surface-mount package
Compatibility
This transistor is suitable for use in a wide range of RF and high-frequency analog circuits, including:
Radio receivers and transmitters
Amplifiers
Mixers
Oscillators
Application Areas
Wireless communications
Radio frequency (RF) circuits
High-frequency analog electronics
Product Lifecycle
The BFS17PE6327HTSA1 is an active and widely available product from Infineon Technologies. There are no plans for discontinuation, and suitable replacement or upgrade options are readily available.
Key Reasons to Choose This Product
Excellent high-frequency performance with a transition frequency of 1.4GHz
Low noise figure of 3.5dB to 5dB at 800MHz, making it suitable for sensitive RF circuits
Wide operating temperature range up to 150°C, providing flexibility in design
Compact surface-mount package for efficient board layout
RoHS3 compliance for environmental responsibility
Reliable and widely available product with ongoing support from Infineon Technologies