Manufacturer Part Number
BFR93AE6327HTSA1
Manufacturer
Infineon Technologies
Introduction
The BFR93AE6327HTSA1 is a high-performance NPN bipolar junction transistor (BJT) designed for radio frequency (RF) applications.
Product Features and Performance
Optimized for high frequency operation up to 6GHz
Low noise figure of 1.5dB to 2.6dB in the 900MHz to 1.8GHz frequency range
High gain of 9.5dB to 14.5dB
Capable of handling up to 90mA of collector current
Breakdown voltage of up to 12V between collector and emitter
Product Advantages
Excellent high-frequency performance
Low noise characteristics
High gain and power handling
Compact surface mount package
Key Technical Parameters
Transistor Type: NPN
DC Current Gain (hFE): Minimum 70 @ 30mA, 8V
Frequency Transition: 6GHz
Gain: 9.5dB to 14.5dB
Noise Figure: 1.5dB to 2.6dB @ 900MHz to 1.8GHz
Power Max: 300mW
Voltage Collector Emitter Breakdown (Max): 12V
Current Collector (Ic) (Max): 90mA
Operating Temperature: 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
Compatibility
Suitable for surface mount applications
Provided in PG-SOT23 package
Application Areas
RF amplifier circuits
Wireless communication systems
Radio frequency identification (RFID) devices
Radar and satellite communications
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgraded products may be available in the future.
Key Reasons to Choose This Product
Excellent high-frequency performance with low noise and high gain
Compact surface mount package for efficient board design
Capable of handling high power and current requirements
RoHS3 compliant for environmentally-conscious applications
Availability and potential for future replacements or upgrades
